p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers : GaN ELECTRONIC DEVICES
Identifieur interne : 000214 ( Main/Repository ); précédent : 000213; suivant : 000215p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers : GaN ELECTRONIC DEVICES
Auteurs : RBID : Pascal:13-0356849Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 108 and subthreshold swings of about 75 mV/decade are achieved.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 000484
Links to Exploration step
Pascal:13-0356849Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers : GaN ELECTRONIC DEVICES</title><author><name sortKey="Hahn, Herwig" uniqKey="Hahn H">Herwig Hahn</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation></author><author><name sortKey="Reuters, Benjamin" uniqKey="Reuters B">Benjamin Reuters</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation></author><author><name sortKey="Pooth, Alexander" uniqKey="Pooth A">Alexander Pooth</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation></author><author><name sortKey="Holl Nder, Bernd" uniqKey="Holl Nder B">Bernd Holl Nder</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Forschungszentrum Jülich</s1><s2>Jülich 52425</s2><s3>DEU</s3><sZ>4 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52425</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich</wicri:noRegion><wicri:noRegion>Forschungszentrum Jülich</wicri:noRegion></affiliation></author><author><name sortKey="Heuken, Michael" uniqKey="Heuken M">Michael Heuken</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="04"><s1>Aixtron SE</s1><s2>Herzogenrath 52134</s2><s3>DEU</s3><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52134</wicri:noRegion><wicri:noRegion>Aixtron SE</wicri:noRegion><wicri:noRegion>Aixtron SE</wicri:noRegion></affiliation></author><author><name sortKey="Kalisch, Holger" uniqKey="Kalisch H">Holger Kalisch</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation></author><author><name sortKey="Vescan, Andrei" uniqKey="Vescan A">Andrei Vescan</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="1">Rhénanie-du-Nord-Westphalie</region><region type="district" nuts="2">District de Cologne</region><settlement type="city">Aix-la-Chapelle</settlement></placeName></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>52428</wicri:noRegion><wicri:noRegion>JARA-FIT</wicri:noRegion><wicri:noRegion>Jülich 52428</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0356849</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0356849 INIST</idno><idno type="RBID">Pascal:13-0356849</idno><idno type="wicri:Area/Main/Corpus">000484</idno><idno type="wicri:Area/Main/Repository">000214</idno></publicationStmt><seriesStmt><idno type="ISSN">0018-9383</idno><title level="j" type="abbreviated">IEEE trans. electron devices</title><title level="j" type="main">I.E.E.E. transactions on electron devices</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term><term>Binary compound</term><term>Coatings</term><term>Depletion mode</term><term>Enhancement mode</term><term>Field effect transistor</term><term>Gallium nitride</term><term>Heterojunction field effect transistor</term><term>Indium nitride</term><term>On off effect</term><term>Performance evaluation</term><term>Quaternary compound</term><term>p channel</term><term>p type semiconductor</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Canal p</term><term>Mode appauvrissement</term><term>Mode enrichissement</term><term>Transistor effet champ</term><term>Transistor effet champ hétérojonction</term><term>Evaluation performance</term><term>Effet on off</term><term>Nitrure de gallium</term><term>Composé binaire</term><term>Nitrure d'aluminium</term><term>Nitrure d'indium</term><term>Composé quaternaire</term><term>Semiconducteur type p</term><term>Revêtement</term><term>GaN</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 10<sup>8</sup> and subthreshold swings of about 75 mV/decade are achieved.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0018-9383</s0></fA01><fA02 i1="01"><s0>IETDAI</s0></fA02><fA03 i2="1"><s0>IEEE trans. electron devices</s0></fA03><fA05><s2>60</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers : GaN ELECTRONIC DEVICES</s1></fA08><fA11 i1="01" i2="1"><s1>HAHN (Herwig)</s1></fA11><fA11 i1="02" i2="1"><s1>REUTERS (Benjamin)</s1></fA11><fA11 i1="03" i2="1"><s1>POOTH (Alexander)</s1></fA11><fA11 i1="04" i2="1"><s1>HOLLÄNDER (Bernd)</s1></fA11><fA11 i1="05" i2="1"><s1>HEUKEN (Michael)</s1></fA11><fA11 i1="06" i2="1"><s1>KALISCH (Holger)</s1></fA11><fA11 i1="07" i2="1"><s1>VESCAN (Andrei)</s1></fA11><fA14 i1="01"><s1>GaN Device Technology, RWTH Aachen University</s1><s2>Aachen 52074</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>Jülich Aachen Research Alliance, JARA-FIT</s1><s2>Jülich 52428</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="03"><s1>Forschungszentrum Jülich</s1><s2>Jülich 52425</s2><s3>DEU</s3><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>Aixtron SE</s1><s2>Herzogenrath 52134</s2><s3>DEU</s3><sZ>5 aut.</sZ></fA14><fA20><s1>3005-3011</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>222F3</s2><s5>354000501005030030</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>36 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0356849</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>I.E.E.E. transactions on electron devices</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Within the last years, III-nitride-based devices have been demonstrated with exceptional performance. There is, however, a severe lack of knowledge when it comes fabrication of p-channel devices. p-Channel heterostructure field-effect transistors (HFETs) could open the way for nitride-based complementary logic. Here, a comprehensive study of enhancement and depletion mode p-channel GaN/AlInGaN HFETs is performed. The influence of a highly p-doped GaN cap layer on device performance is investigated. Gate recessing and changes in composition of the backbarrier are analyzed. ON/OFF ratios of up to 10<sup>8</sup> and subthreshold swings of about 75 mV/decade are achieved.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03F04</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Canal p</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>p channel</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Canal p</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Mode appauvrissement</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Depletion mode</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Modo empobrecimiento</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Mode enrichissement</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Enhancement mode</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Modo enriquecimiento</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Transistor effet champ</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Field effect transistor</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Transistor efecto campo</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Transistor effet champ hétérojonction</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Heterojunction field effect transistor</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Transistor efecto campo heterounión</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Evaluation performance</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Performance evaluation</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Evaluación prestación</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Effet on off</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>On off effect</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Efecto on off</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Nitrure de gallium</s0><s5>22</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Gallium nitride</s0><s5>22</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Galio nitruro</s0><s5>22</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Composé binaire</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Binary compound</s0><s5>23</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Compuesto binario</s0><s5>23</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0><s5>25</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Aluminium nitride</s0><s5>25</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Aluminio nitruro</s0><s5>25</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Nitrure d'indium</s0><s5>26</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Indium nitride</s0><s5>26</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Indio nitruro</s0><s5>26</s5></fC03><fC03 i1="12" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>27</s5></fC03><fC03 i1="12" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>27</s5></fC03><fC03 i1="12" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>27</s5></fC03><fC03 i1="13" i2="X" l="FRE"><s0>Semiconducteur type p</s0><s5>28</s5></fC03><fC03 i1="13" i2="X" l="ENG"><s0>p type semiconductor</s0><s5>28</s5></fC03><fC03 i1="13" i2="X" l="SPA"><s0>Semiconductor tipo p</s0><s5>28</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Revêtement</s0><s5>29</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Coatings</s0><s5>29</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Revestimiento</s0><s5>29</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>GaN</s0><s4>INC</s4><s5>82</s5></fC03><fC07 i1="01" i2="X" l="FRE"><s0>Composé III-V</s0><s5>08</s5></fC07><fC07 i1="01" i2="X" l="ENG"><s0>III-V compound</s0><s5>08</s5></fC07><fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-V</s0><s5>08</s5></fC07><fN21><s1>336</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 000214 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 000214 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:13-0356849
|texte= p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers : GaN ELECTRONIC DEVICES
}}
| This area was generated with Dilib version V0.5.77. |  |